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ECO-PAC 2 IGBT Module
Preliminary Data Sheet
TM
PSIG 75/06 PSI 75/06* PSIS 75/06* PSSI 75/06*
AC 1 L9 T16 X15 NTC X16 IK 10
IC25 = 69 A VCES = 600 V VCE(sat)typ. = 2.3 V
X15 NTC X16 L9 F1 AC 1 IK 10
OP 9 L9 E2 K10 X16 X13 GH 10 NTC X15 VX 18
PSI 75/06* IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C Conditions TVJ = 25C to 150C
PSIS 75/06*
PSSI 75/06*
LMN S
Maximum Ratings 600 20 69 48 100 VCES 10 208 V V A A A s
A IJK
PSIG 75/06*
VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C Conditions
*NTC optional Features
W
* * * * * * * * * * * * * * *
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.3 2.8 4.5 2.8 6.5 0.8 4.4 100 50 55 300 30 1.8 1.4 2.8 1.2 V V V mA mA nA ns ns ns ns mJ mJ nF 0.6 K/W K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 75 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688
Applications
AC and DC motor control AC servo and robot drives power supplies welding inverters
VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 40 A VGE = 15/0 V; RG = 22
Advantages
Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/06
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 40 A; TVJ = 25C TVJ = 125C IF = 30 A; diF/dt = 500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Maximum Ratings 56 35 A A
Package style and outline
Dimensions in mm (1mm = 0.0394")
PSI
Characteristic Values min. typ. max. 2.32 1.58 15 70 2.6 2.59 V V A ns 1.3 K/W K/W
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K
Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2
PSSI
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
PSIG
PSIS
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/06
150
A 120
VGE= 17 V 15 V 13 V
150 A 120 90
11V VGE= 17 V 15 V 13 V
IC
IC
90 60 30 0
11V TVJ = 125C
60
TVJ = 25C 9V
30 0
9V
42T60
42T60
0
1
2
3
4
VCE
5
V
6
0
1
2
3
4
VCE
5V
6
Fig. 1 Typ. output characteristics
150
A 120 IC
VCE = 20 V
Fig. 2 Typ. output characteristics
90 A 75 IF 60 45
90 60
TVJ = 125C TVJ = 25C
TVJ = 125C
TVJ = 25C
30 15
42T60
30 0
0
42T60
4
6
8
10
12
VGE
14 V 16
0,0
0,5
1,0
VF
1,5
V
2,0
Fig. 3 Typ. transfer characteristics
50 40 A
VCE = 300 V IC = 50 A
Fig. 4 Typ. forward characteristics of free wheeling diode
150 120 ns 90
TVJ = 125C VR = 300 V IF = 30 A IRM
20
V
15
VGE
IRM
trr
trr
30 20
10
60 30
42T60
5
10
42T60
0
0
0
40
80
120
QG
nC
160
0
200
400
600
-di/dt
800 A/s
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/06
10,0
mJ Eon
td(on)
100 ns 75 t Eoff
4
mJ Eoff
400 ns 300 t
7,5
tr
VCE = 300 V VGE = 15 V
3
5,0
50
2
td(off)
VCE = 300 V VGE = 15 V RG = 22 TVJ = 125C
200
2,5
Eon
RG = 22 TVJ = 125C
42T60
25
1
100 tf
0,0
0
40
80
IC
A
120
0
0
42T60
0
40
80 IC
A
0 120
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current
3
mJ 600 ns
4
mJ Eon
td(on) Eon tr
80 ns 60 t
Eoff
3
VCE = 300 V VGE = 15 V IC = 50 A TVJ = 125C
42T60
2
VCE = 300 V VGE = 15 V IC = 50 A TVJ = 125C
Eoff td(off)
400
t
2
40
1
200
1
0
10
20
30
40
RG
50 60
20
0
tf
42T60
0
10
20
30
40
RG
50 60
0
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor
10 K/W ZthJC 1
diode IGBT
120
A ICM
90
RG = 22 TVJ = 125C
0,1 0,01
60
30
0,001
42T60
single pulse
0
0
100
200
300
400
500
600
VCE
700 V
0,0001 0,00001 0,0001 0,001
VID...75-06P1
0,01
0,1 t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance RBSOA
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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